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Cryogenic noise performance of InGaAs/InAlAs HEMTs grown on InP and GaAs substrate

Identifieur interne : 000169 ( Main/Repository ); précédent : 000168; suivant : 000170

Cryogenic noise performance of InGaAs/InAlAs HEMTs grown on InP and GaAs substrate

Auteurs : RBID : Pascal:14-0025783

Descripteurs français

Pascal (Inist)
- Cryogénie, Température cryogénique, Evaluation performance, Transistor mobilité électron élevée, Etude comparative, Amplificateur faible bruit, Système tampon, Transistor pseudomorphique, Transistor métamorphique, Région active, Température bruit, Refroidissement, Phosphure d'indium, Composé binaire, InP.

English descriptors

KwdEn :
- Active region, Binary compound, Buffer system, Comparative study, Cooling, Cryogenic temperature, Cryogenics, High electron mobility transistor, Indium phosphide, Low noise amplifier, Metamorphic transistor, Noise temperature, Performance evaluation, Pseudomorphic transistor.

Abstract

We present a comparative study of InGaAs/InAlAs high electron mobility transistors (HEMTs), intended for cryogenic ultra-low noise amplifiers (LNAs) and fabricated on different substrate and buffer technologies. The first was pseudomorphically grown on InP (InP pHEMT) while the second was grown on a linearly graded metamorphic InAlAs buffer on top of a GaAs substrate (GaAs mHEMT). Both HEMTs had identical active epitaxial regions. When integrated in a 4-8 GHz 3-stage LNA at 300 K, the measured average noise temperature was 45 K for the InP pHEMT and 49 K (9% higher) for the GaAs mHEMT. When cooled down to 10 K, the InP pHEMT LNA was improved to 1.7 K whereas the GaAs mHEMT LNA was only reduced to 4 K (135% higher). The observed superior cryogenic noise performance of the HEMTs grown on InP is believed to be due to a higher carrier confinement within the channel. Microscopy analysis suggested this was related to defects from the metamorphic buffer of the GaAs mHEMT.

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Pascal:14-0025783

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<author><name sortKey="Schleeh, J" uniqKey="Schleeh J">J. Schleeh</name>
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<author><name sortKey="Rodilla, H" uniqKey="Rodilla H">H. Rodilla</name>
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<author><name sortKey="Wadefalk, N" uniqKey="Wadefalk N">N. Wadefalk</name>
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<term>Indium phosphide</term>
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<front><div type="abstract" xml:lang="en">We present a comparative study of InGaAs/InAlAs high electron mobility transistors (HEMTs), intended for cryogenic ultra-low noise amplifiers (LNAs) and fabricated on different substrate and buffer technologies. The first was pseudomorphically grown on InP (InP pHEMT) while the second was grown on a linearly graded metamorphic InAlAs buffer on top of a GaAs substrate (GaAs mHEMT). Both HEMTs had identical active epitaxial regions. When integrated in a 4-8 GHz 3-stage LNA at 300 K, the measured average noise temperature was 45 K for the InP pHEMT and 49 K (9% higher) for the GaAs mHEMT. When cooled down to 10 K, the InP pHEMT LNA was improved to 1.7 K whereas the GaAs mHEMT LNA was only reduced to 4 K (135% higher). The observed superior cryogenic noise performance of the HEMTs grown on InP is believed to be due to a higher carrier confinement within the channel. Microscopy analysis suggested this was related to defects from the metamorphic buffer of the GaAs mHEMT.</div>
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Cryogenic noise performance of InGaAs/InAlAs HEMTs grown on InP and GaAs substrate

Cryogenic noise performance of InGaAs/InAlAs HEMTs grown on InP and GaAs substrate

Descripteurs français

English descriptors

Abstract

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Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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